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a Department of Physics, University of Lucknow, Lucknow-226007, U.P., India
b Faculty of Engineering and Technology, Khwaja Moinuddin Chisti Language
University, Lucknow- 226013, U.P., India
Journal of Optoelectronic and Biomedical Materials 2025, 17(2),51-60; https://doi.org/10.15251/JOBM.2025.172.51
Researchers have fabricated non-stoichiometric InSb thin films of varying thicknesses through thermal evaporation. The technique involves depositing nanocrystalline p-InSb semiconducting layers on glass substrates at room temperature using an optimized source material. The resulting p-type InSb films had thicknesses ranging from 150 nm to 450 nm.
This study investigated the effect of thickness on the electrical, optical, and structural properties of p-InSb thin films. Structural analysis was conducted using grazing angle X- ray diffraction (GIXRD), which revealed a polycrystalline zinc-blend structure with a preferred orientation along the 220 planes. The research found a peak hole mobility of
2.01E+04 cm2/V-s. A high carrier mobility, a characteristic feature of 2D materials, is essential for the development of advanced optoelectronic and electronic devices.
