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Confinement factor and carrier recombination of InGaAsP/InP quantum well lasers

E. M. T. Salman ,M. R. Jobayr ,H. K. Hassun

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Influence of double InGaAs/InAs channel on DC and RF performances ofInP-based HEMTs

H. L. Hao ,M. Y. Su ,H. T. Wu ,H. Y. Mei ,R. X. Yao ,F. Liu ,H. Wen ,S. X. Sun

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Modelling and analysis of solar cells based on GaAs/p-Si: impact on arc dependency

F. M. Rahimi ,M. Z. M. Yusoff ,M. S. Yahya s ,M. M. I. Sapeli ,N. Zulkepli

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