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Department of physics, College of Education for Pure Science, Ibn Al-Haitham,
University of Baghdad, Baghdad, Iraq
Journal of Ovonic Research 2022, 18(4),519-526; https://doi.org/10.15251/JOR.2022.184.519
AgInSe2 (AIS) thin films solar cell involving of n-type AgInSe2 and Si ofp-type substrate by using thermal evaporation method. The influence of annealing of the preparation AgInSe2 were considered to find the best properties of solar device. Thin film AIS have been deposited under the vacuum of 1.5*10-6 Torr with (400) nm thickness at R.T and annealing temperatures (473,573) K. Polycrystalline tetragonal structure for AIS thin films from XRD and increasing of surface roughness from AFM, energy gap values decreasing with increasing annealing temperatures, all films were negative type, I-V characteristics show increasing of efficiency with increasing of annealing temperatures.
