Manufacturing Br:CO3O4 /Si Heterojunction For Photodetector Applications

H. K. Hassun ,B. K. H. Al-Maiyaly ,B. H. Hussein

doi:10.15251/JOR.2023.191.15

H. K. Hassun

B. K. H. Al-Maiyaly

B. H. Hussein

Department of Physics, College of Education for Pure Science / Ibn Al-Haitham,

University of Baghdad, Baghdad, Iraq

Journal of Ovonic Research 2023, 19(1),15-21; https://doi.org/10.15251/JOR.2023.191.15

Submitted：Sept 18, 2022

Accepted：Jan 04, 2023

Published：Jan 01, 2023

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H. K. Hassun ,B. K. H. Al-Maiyaly ,B. H. Hussein . (2023). Journal of Ovonic Research. Manufacturing Br:CO3O4 /Si Heterojunction For Photodetector Applications, 19(1), ,15-21. https://doi.org/10.15251/JOR.2023.191.15

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Abstract

This research including, CO3O4 was prepared by the chemical spry pyrolysis, deposited film acceptable to assess film properties and applications as photodetector devise, studying the optical and optoelectronics properties of Cobalt Oxide and effect of different doping ratios with Br (2, 5, 8)%. the optical energy gap for direct transition were evaluated and it decreases as the percentage Br increase, Hall measurements showed that all the films are p-type, the current–voltage characteristic of Br:CO3O4 /Si Heterojunction show change forward current at dark varies with applied voltage, high spectral response, specific detectivity and quantum efficiency of CO3O4 /Si detector with 8% of Br ,was deliberate, extreme value with 673nm.

Keywords

Cobalt oxides

Optoelectronic

Photodetector