HomeL. Ayat
A. Idda
Laboratory of Semiconductor Devices Physic, University of Tahri Mohamed, PB 417, Bechar (08000), Algeria
Journal of Ovonic Research 2023, 19(2),165-173; https://doi.org/10.15251/JOR.2023.192.165
Submitted：Dec 17, 2022
Accepted：Mar 07, 2023
Published：Mar 01, 2023
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Cite This Article
L. Ayat ,A. Idda . (2023). Journal of Ovonic Research. Analysis of a-Si:H/SiGe heterostructure solar cell, 19(2), ,165-173. https://doi.org/10.15251/JOR.2023.192.165
Abstract
In this paper we present the results of the numerical simulation using wx-AMPS1D software of a solar cell based on hydrogenated amorphous silicon (a-Si: H / c-SiGe), the top layer has the largest band gap, while the bottom layer has the smallest bandgap. This design allows less energetic photons to pass through the upper layer(s) and be absorbed by the layer below, which increases the overall efficiency of the solar cell to obtain an efficiency high conversion rate. As the results, remarkable improvements on Voc, Jsc and FF have been achieved with the incorporation of n-c-SiGe layer, we achieved an efficiency
of 11.93%.
©2026 by the authors. Submitted for possible open access publication under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
