^aSchool of Material Science and Engineering, Zhengzhou University of

Aeronautics, Zhengzhou 450015, China

^bSchool of Electronic Information, Huanghuai University, Zhumadian 463000,

China

^cKey Laboratory of Functional Materials and Devices for Informatics of Anhui

Educational Institutions, Fuyang Normal University, Fuyang, 236037

In this paper, the damage caused by C ion irradiation on AlGaAs/InGaAs HEMT was investigated. The projection ranges ofC ions with varying energies in AlGaAs and InGaAs materials were calculated using Monte Carlo simulation. Additionally, simulations were conducted to study the radiation-induced damage caused by 50 keV, 70 keV, and 100 keV C ions incident on the basic structure of the AlGaAs/InGaAs heterojunction.The results showed that when using 70 keV energy for C ions, a higher number of vacancy defects were generated. Based on these findings, the influence of defects introduced by different irradiation doses of 70 keV C ions on the DC and RF characteristics of the device was analyzed.