a Department of Transport Technology and Engineering, Higher Institute of

Transport and Logistics, University of Sousse, TunisbLaboratory of Condensed

Matter and Nanosciences, University of Monastir, Monastir 5000, Tunisia

^cMechatronic Engineering, Technological University Dublin, Dublin 15, Ireland dDepartment of Physics, Faculty of Science, King Khalid University, P.O. Box

9004, Abha, 61413, Saudi Arabia

^eDepartment of Physics, Faculty of Science, Islamic University of Madinah,

Madinah, 42351, Saudi Arabia

^fLaboratory of Micro-Optoelectronics and Nanostructures (LMON), University of Monastir, Avenue of the Environment, 5019 Monastir, Tunisia

The electric and dielectric processes of AlGaN/GaN/Si HEMTs produced by molecular beam epitaxy were examined utilizing direct current-voltage, impedance spectroscopy, and DLTS measurements. Using current-voltage measurements, the DC electrical characteristics of AlGaN/GaN/Si HEMTs revealed the self-heating effect. The relaxation dynamics of charge carriers appear to be studied by the conductance mechanism and electric modulus formalisms. Behavior that is frequency dependent has been observed in impedance spectroscopy. Last but not least, DLTS data have demonstrated the existence of electron traps. The prevalence of parasitic effects and conduction mechanisms are remarkably correlated with deep levels.