^aDepartment of Physical Sciences, Banasthali Vidyapith, Banasthali 304022 India bDepartment of Computer Engineering and Applications, G. L. A. University

Mathura 281406 India

^cDepartment of Chemical Engineering, Banasthali Vidyapith, Banasthali 304022

India

^dDepartment of Physics, Chintamani College of Science, Pombhurna,

Chandrapur, Maharashtra 442918 India

^eDepartment of Physics, Poornima Institute of Engineering & Technology, Jaipur 302022 India

^fDepartment of Chemistry, Banasthali Vidyapith, Banasthali 304022 India

^gDivision of Research & Innovation, School of Applied and Life Sciences,

Uttaranchal University, Dehradun, Uttarakhand 284007 India

h University Centre for Research & Development, Department of Physics,

Chandigarh University, Mohali, Punjab 140413 India

The use of hybrid halide Perovskites is helping us get closer to our aim of completely self- sufficient structures in terms of energy production. Preparation of a device of photoactive material CH3NH3PbI3 {FTO (Fluorine-doped tin Oxide)/ CH3NH3PbI3/Spiro- OMeTAD/Al} for the photovoltaic applications has been described in this article.

Producing a homogeneous thin film through the use of lower temperature, processed- solution devices with one-step spin coating processes is an essential stage in the fabrication process. To generate the thin films on the FTO-substrate, the one-step spin coating approach was utilized for the deposition of the precursor solution, which consisted of methylammonium iodide and lead iodide in a molar ratio of 3:1. This technique was employed to prepare the thin films. The FESEM technique was utilized to carry out the investigation of the surface morphology of this thin layer. In addition, the essential parameters of this device, like barrier height, saturation current, current density, ideality factor, carrier mobility, resistance, carrier lifetime, and capacitance have been computed using current-voltage (I-V) characteristics and the impedance spectroscopy technique. A laser with a power of 20 milliwatts and a wavelength of 532 nanometers was used to light the gadget. The current conduction mechanism exhibits ohmic behavior at a low voltage, while at medium voltages, TFSCLC is the mechanism that regulates charge transportation.

Despite the fact that TCSCLC is demonstrated at higher voltages. The TCSCLC model was used to conduct an investigation of the hole's mobility.