^aSchool of Material Science and Engineering, Zhengzhou University of

Aeronautics, Zhengzhou 450015, China

^bHenan Key Laboratory of Smart Lighting, School of Electronic Information and Engineering, Jilin University, Changchun, 130015, China

^cSchool of Electronic Information, Huanghuai University, Zhumadian 463000,

China

^dKey Laboratory of Functional Materials and Devices for Informatics of Anhui

Educational Institutions, Fuyang Normal University, Fuyang, 236037

In order to promotion the RF performance, a grade In1-xGaxAs channel (G-HEMT) introduced to the AlGaAs/InGaAs HEMT. The G-HEMT with the grade In1-xGaxAs channel forms a deeper potential well and confines more electrons in the channel, results in improving the DC and RF characteristics. Moreover, because of the grade In1-xGaxAs is effectively reduced the peak electric field, and leads to a significant increase in breakdown voltage (BV). Moreover, the G-HEMT also increases resistance to single event effects (SEE). The simulation results indicate that the fmax is significantly increased to 889 GHz of G-HEMT from 616 GHz of conventional AlGaAs/InGaAs HEMT (C-HEMT). The thefT is significantly increased to 521 GHz of G-HEMT from 326 GHz of C-HEMT, as well as the IDsat is increased by 64.8% and the BV increases by 37%. In addition, the SEE peak drain current of G-HEMT is dramatically reduced 51%.