HomeA. Y. Boboev
a
X. A. Maxmudov
b
N. Y. Yunusaliyev
a
B. M. Ergashev
a
G. G. Tojiboyev
a
F. A. Abdulkhaev
a
a Andijan state university named after Z.M. Babur, Andijan, Uzbekistan
b Kokand University Andijan branch, Andijan, Uzbekistan
Journal of Ovonic Research 2025, 21(4),481-493; https://doi.org/10.15251/JOR.2025.214.481
Submitted：Apr 02, 2025
Accepted：Aug 05, 2025
Published：Aug 01, 2025
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Cite This Article
A. Y. Boboev ,X. A. Maxmudov ,N. Y. Yunusaliyev ,B. M. Ergashev ,G. G. Tojiboyev ,F. A. Abdulkhaev . (2025). Journal of Ovonic Research. SRIM simulation of cobalt ions interaction with ZnO-based thin films, 21(4), ,481-493. https://doi.org/10.15251/JOR.2025.214.481
Abstract
From the past few years simulation methods widely used in scientific and technological research. The SRIM 2013 code is used here to simulate 1.25 MeV Co-ion implantation on ZnO, ZnO:S, and ZnO:S/Si thin films. Atomic displacements, energy loss, and defect formation are common occurrences when ions interact with matter. Dopants such as sulfur and the presence of silicon substrate greatly influence the stopping power and damage profile. Comparison of the results with available data allowed us to assess differences in defect formation and ion interaction behavior.
©2026 by the authors. Submitted for possible open access publication under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
