a Laboratory of micro-optoelectronics and nanostructures (LR99ES29), University of Monastir, Faculty of Sciences Monastir, Environment Avenue5019 Monastir,

Tunisia

b Institut Supérieur des Sciences Appliqués et Technologie de Sousse, Université

de Sousse, Tunisia

c Laboratory for the Development of Renewable Energies and their Applications in Saharan areas (LDREAS), TAHRIMed University of Bechar, Faculty of Exact

Sciences, Algeria

d Department of physics, College of Science, Qassim University, Saudi Arabia.

e Department of Nanotechnology Engineering and Nanophotonics Research and

Application Center, Sivas Cumhuriyet University, 58140 Sivas, Turkey

This work presents the development of PN, PIN, and P+PIN solar cells using GaAs and BGaAs in AM1.5G conditions. The structural modeling and simulation of the device were carried out using Silvaco applications. The efficiency of BGaAs and GaAs materials was examined by varying doping concentration and thickness. The study was designed to optimize the physical properties of PN, PIN, and P+PIN junction cell structures for high efficiency. First, the doping dosage and layer thickness were optimized to create the best possible design for the cells. Then, the conversion capacity, short-circuit current density, fill factor, and open-circuit voltage of the photovoltaic cells were evaluated. Finally, the optimized devices were compared against existing devices in the literature. While the simulated P+PIN structure efficiency reached 28.2%, compared to 25.2% for the PIN structure, homojunction GaAs attained an efficiency of around 22.4%, compared to the BGaAs/GaAs heterojunction, which only represents 19.6% efficiency. Each solar cell simulation was run at 300 K with 1 sun of normal solar spectrum AM1.5G light intensity.