a Andijan state university named after Z.M. Babur, Andijan, Uzbekistan

b Urgench state university, Urgench city, Uzbekistan

In this paper, using the Stopping and Range of Ions in Matter (SRIM) simulation, we considered the case of irradiating sulfur doped zinc oxide (ZnO:S). The composition in the study was 48.0% Zn, 49.0% O, and 3.0% S, and we analyzed the implications of various proton energies (10 keV, 100 keV, 500 keV and 1000 keV). Our analyses examined the depth profile of vacancy concentration, ionization, phonon energy loss, and recoil energies of the sputtered material. Results show that the higher concentration of vacancies generated near the surface when irradiated with low energy protons (10–100 keV) and the deeper penetration of the high energy protons (500–1000 keV), that generates a more homogeneous ionization. Additionally, the modest energy loss on the material is attributable to the ionization involving the higher energy protons, because these form the basis of the ionizing particle. The results provide a scientific basis for making ZnO-based device designs radiation-resistant.