a Department of Physics, College of Education for Pure Science/Ibn Al-Haitham, University of Baghdad, 10053 Baghdad, Iraq

Metal oxides such as Silver oxide (Ag2O) are practically absorbed in applications thin-film solar cell due to their optimum of ban-dgap 1.6 eV and high value absorption coefficient.

We propose a novel material on Ag2O-based n-In2S3/p-Ag2O/n-Si double-heterojunction solar cell, with the Cu ratios (0, 0.01, 0.02) have been proven as a successful fabric by thermal evaporation techniques as an absorbent layer. As for a single heterojunction, p- Ag2O/n-Si establishes an efficiency of 1.99 %, where JSC = 6.175 mA/cm2 ;VOC = 0.45 V & FF = 71.6%. Though, Ag2O based double-heterojunction device n-In2S3/p-Ag2O/n-Si with

the optimized structure provides an efficiency 2.742%, JSC = 7.875mA/cm2; VOC = 0.462V & FF = 75.28%. A remarkable increase of JSC and VOC in the double-heterojunction occurs as a result. The n-In2S3/p-Ag2O/p-Si heterojunction causes the higher efficiency for solar cell.

In the current state; efficiency conversion factor (η) increases when adding Copper and when using a window layer (n-In2S3), the direct transition’s energy bandgap declines from 1.6 eV (when Cu is 0.0) to 1.4 eV (when Cu is 0.04) where the bandgap energy of In2S3 is (2 eV).

The measurement for the current voltage where illumination shows that a heterojunction of a solar cell’s performance is enhanced with an increase in the Cu contents. This results indicates that the preparation of the solar cells with 0.04 Cu ratios resulted in the maximum efficiency (1.99%) compared with the other prepare solar cell.