¹ Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, 20 Yangi Almazar st., Tashkent 100057, Uzbekistan;

² Western Caspian University, Baku AZ1001, Azerbaijan;

³ Department of Physics and Chemistry, Azerbaijan Architecture and Construction University, Baku AZ1073, Azerbaijan

* Correspondence: dilmurod-1991@bk.ru

In this work, the effect of γ-radiation and palladium impurities on the crystal structure of silicon samples was investigated using Raman spectroscopy. The Raman spectra of all studied samples demonstrate the presence of a main peak at ~521 cm^-1, corresponding to the transverse optical (TO) mode of crystalline silicon. The preservation of the position of this peak in all cases indicates that even after palladium diffusion and γ-irradiation, the silicon crystal structure remains generally stable and does not undergo complete destruction. The results show that exposure to γ-radiation leads to a noticeable increase in the low-frequency background and broadening of the main phonon peak, indicating the accumulation of radiation defects and partial amorphization of the material. The introduction of palladium significantly reduces the intensity of defect bands and stabilizes the structure, acting as a gettering and compensating element. A particularly pronounced effect is observed in samples doped with Pd at 1200 °C, where γ-irradiation has a minimal destructive effect on the lattice.