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Prediction of isolated and thermal point defects in B2 aluminium-based crystalline compounds of transition metals AlTM (TM = Ru, Ir, Os and Rh)

A. Kerboub ,H. Louafi ,B. Zaidi ,E. Belbacha

Abstract

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Study of the effect of the gate’s length on the electrical quality of AlGaN/GaN heterostructures based HEMTs

M. Mostefaoui ,A. H. Kacha ,A. Rabehi ,K. Ameur ,H. Mazari ,J. M. Bluet

Abstract

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Yb/WO3/Yb back to back Schottky barriers designed as voltage controlled rectifiers and as microwave resonators

A. F. Qasrawi ,Rana B. Daragme

Abstract

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Production of PbO thin film using Silar method and electronıc and interface properties of Pb/PbO/p-Si MIS contacts

E. Erdem ,S. Asubay ,O. Gulluc

Abstract

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Effect of the incorporation of gold nanoparticles on the current_voltage characteristics of Ag/Si diodes in the dark and under light

J. Ghabboun ,I. Musa ,N. Adawi ,M. Mousallam

Abstract

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Performance of PT/CRSE Schottky diodes designed for 5G/6G technology applications

L. H. Kh. Alfhaid ,A. F. Qasrawi

Abstract

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