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aDepartment of Physics, Collage of Science, University of Ha’il, Ha’il, Saudi
Arabia
bDepartment of Physics, Arab American University, Jenin, Palestine
cDepartment of Electrical and Electronics Engineering, Istinye University, 34010, Istanbul, Turkey
Journal of Ovonic Research 2024, 20(1),65-74; https://doi.org/10.15251/JOR.2024.201.65
Herein thin films of CrSe deposited by the thermal evaporation technique onto Pt substrates are designed as Schottky diodes. It is observed that the Pt/CrSe/C (PCC) Schottky diodes are of tunneling type showing barrier height and widths of 0.56 eV and 18 nm, respectively. These diodes displayed biasing dependent nonlinearity and negative slope of differential resistance. The analyses of the cutoff frequency spectra indicated that PCC devices can exhibit high cutoff frequency up to 17 GHz based on the driving signal frequency. The features of the PCC devices make it promising as electronic component suitable for 5G/6G technology applications.
