a University of Ahmed Draya, Adrar, Algeria

^bFaculty of Technology, University of Blida.1, Algeria

^cInstitute of Microelectronics, Electronics and Nanotechnology (IEMN), UMR

CNRS 8520. University of Sciences and Technologies of Lille 1. Poincare Avenue, 60069, 59652 Villeneuve of Ascq, France

This paper focuses on studying and simulating a GaAs1-xPx/Si1-yGey/Ge triple-junction solar cell structure. First, the strain and the bandgap energy associated to the SiGe layer have been studied. The optimal germanium concentration is 0.88 with a strain around 0.45%. Then, the phosphor concentration effect on the strain and the bandgap energy of the upper layer GaAs1-xPx/Si0.12Ge0.88 has been optimized. At room temperature, the optimal output parameter reach Jsc=34.41mA/cm2, Voc=1.27V, FF=88.42% and η=38.45% for an absorber thickness of 4.5µm and x=0.47, with a strain that doesn’t exceed 1.5%.

This study has enabled us to design a high-efficiency, low cost 3J solar cell.