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Electrical characterization of AlGaN/GaN/Si high electron mobility transistors

H. Mosbahi ,M. Gassoumi ,A. Guesmi ,N. Ben Hamadi ,M.A. Zaidi

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Electron confinement enhancement in AlGaN/AlN/GaN HEMT using BGaN buffer

M.Gassoumi ,A.Helali ,Malek. Gassoumi ,Z. Elleuch ,N. Boughdiri ,H. Guesmi ,S. Rejab ,H.Maaref

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Colossal permittivity, impedance analysis and electric properties in AlGaN/GaN HEMTs

H. Mosbahi ,A. Essaoudib ,N. E. Gorji ,A. Gassoumid ,A. Almohammedi ,A. Helali ,M. Gassoumib

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Study of the effect of the gate’s length on the electrical quality of AlGaN/GaN heterostructures based HEMTs

M. Mostefaoui ,A. H. Kacha ,A. Rabehi ,K. Ameur ,H. Mazari ,J. M. Bluet

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