Electrical characterization of AlGaN/GaN/Si high electron mobility transistors

H. Mosbahi ,M. Gassoumi ,A. Guesmi ,N. Ben Hamadi ,M.A. Zaidi

doi:10.15251/JOR.2022.182.159

H. Mosbahi

M. Gassoumi

A. Guesmi

N. Ben Hamadi

M.A. Zaidi

a University of Sousse, Department of Transport Technology and Engineering,

Higher Institute of Transport and Logistics, , Tunisia

b University of Monastir, Faculty of Sciences, Laboratory of Condensed Matter and Nanosciences, Monastir 5019, Tunisia

c Chemistry Department, College of Science, IMSIU (Imam Mohammad Ibn Saud Islamic University), P.O. Box 5701, Riyadh 11432, Saudi Arabia.

d University of Monastir, Department of Physics, Faculty of Sciences of Monastir, Tunisia.

Journal of Ovonic Research 2022, 18(2),159-165; https://doi.org/10.15251/JOR.2022.182.159

Submitted：Dec 26, 2021

Accepted：Mar 15, 2022

Published：Apr 12, 2022

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Cite

H. Mosbahi ,M. Gassoumi ,A. Guesmi ,N. Ben Hamadi ,M.A. Zaidi . (2022). Journal of Ovonic Research. Electrical characterization of AlGaN/GaN/Si high electron mobility transistors, 18(2), ,159-165. https://doi.org/10.15251/JOR.2022.182.159

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Abstract

AlGaN/GaN/Si HEMTs have been investigated using current-voltage-temperature and

CDLTS measurements.As has been found from current voltage measurements, parasitic

effects were revealed indicating the presence of traps in HEMT device. As a result, the

origins of traps are determined from CDLTS experiments.

Keywords

AlGaN/GaN/Si HEMTs

CDLTS

Current-voltage

Traps