a Applied Physics Department, College of Applied Science, University of Technology, 10066 Baghdad, Iraq

b Physics Department, College of Science, Mustansiriyah University, 10052 Baghdad, Iraq

In this work, three Zinc oxide (ZnO) and Chromium (ӀӀӀ) oxide (Cr2O3) based heterostructures Ag/ZnO/Si/Ag, Ag/Cr2O3/Si/Ag, and Ag/ZnO/Cr2O3/Si/Ag, were fabricated and characterized to evaluate their efficiency in solar cell and photodetector applications. All samples exhibited heterojunction behavior in I–V measurements conducted in both dark and illuminated conditions. The reverse current significantly improved under illumination, indicating effective electron-hole pair generation. This is particularly true for the Ag/ZnO/Cr2O3/Si/Ag binary structure, which recorded the highest forward current due to its low energy barrier and the synergistic effect between the two layers. Spectroscopically, in photodetector examinations, three main spectral peaks were observed: at ~350 nm (specific to ZnO), ~550 nm (specific to Cr2O3), and ~850 nm (specific to silicon). ZnO/Si showed a high response at ~350nm and ~850 nm, while Cr2O3/Si showed a more pronounced peak at ~550 nm, ~850 nm, with a weak response in the ultraviolet range. ZnO/Cr2O3/Si combined the responses of both materials, showing improved performance in all ranges (UV-Vis-NIR). These results confirm that the ZnO/Cr2O3/Si binary structure offers unique optical and electronic integration, allowing for improved photosensitization efficiency in multiple spectral ranges without negatively affecting current stability in the dark. This structure also demonstrates its potential for integration into hybrid applications that combine efficient photoelectric conversion with high spectral response, enhancing its feasibility in sustainable energy systems and optical detection.