a Department of Electronics and Communication Engineering, Centurion University of Technology and Management, Odisha, Bhubaneswar, 752050, India

This work presents a mathematical model describing the resistive switching behavior in Ag/ZnO/FTO memristor. Further, analyses are employed to distinguish the active

conduction mechanisms in different bias regimes and simultaneously a hybrid mathematical model is developed that combines Schottky type interfacial injection, Poole Frenkel (PF) bulk emission, and Ohmic filament conduction, with a logistic state variable describing filament formation and rupture. Furthermore, the model is implemented in MATLAB, and nonlinear fitting of the experimental sweeps demonstrated excellent agreement between simulation and measurement. Extracted parameters such as ON and OFF state resistances (Ron and Roff), barrier height (∅B) and ionic mobility (μion) provide insights into conduction dynamics, confirming filamentary electrochemical growth as the dominant switching mechanism in ZnO based memristors. Moreover, the study considers temperature dependent rupture dynamics, where the exponential thermal activation factor is proportional to the existing filament, with filament formation in the proposed memristor being primarily field driven but enhanced by temperature through increased ionic mobility.